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              MMSD103T1G, SMMSD103T1G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25 ?C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 V) (VR = 200 V, T J = 150 ?C) IR ? ? 1.0 100 A Reverse Breakdown Voltage (IBR = 100 A) V(BR) 250 ? V Forward Voltage (IF = 100 mA) (IF = 200 mA) VF ? ? 1000 1250 mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD ? 5.0 pF Reverse Recovery Time (IF = I R = 30 mA, R L = 100 ) trr ? 50 ns Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I F) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp ? t rr +10 V 2.0 k 820 0.1 F D.U.T. VR 100 H 0.1 F 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE tr tp t 10% 90% IF IR trr t IR(REC) = 3.0 mA OUTPUT PULSE (IF = I R = 30 mA; MEASURED at IR(REC) = 3.0 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit |